| Автор | Adam Gali |
| Автор | József Miro |
| Автор | Peter Deák |
| Автор | Chris P Ewels |
| Автор | Robert Jones |
| Дата выпуска | 1996-10-07 |
| dc.description | Semi-empirical PM3 cluster calculations are used to show that stable, electrically active NO complexes may exist in silicon. Based on their relative stability with respect to oxygen and nitrogen pairs, the retardation of thermal double donor formation in the presence of nitrogen is explained, but an equilibrium concentration much less than that of NN pairs is predicted. It is also shown that interaction of NO with a single nitrogen atom creates a bistable NNO defect, while encounter with an oxygen or an NN pair preserves the electrical activity of the NO centre. The possible role of the NO complex in shallow thermal donor formation is discussed. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Theoretical studies on nitrogen - oxygen complexes in silicon |
| Тип | paper |
| DOI | 10.1088/0953-8984/8/41/016 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 8 |
| Первая страница | 7711 |
| Последняя страница | 7722 |
| Выпуск | 41 |
