| Автор | San-huang Ke |
| Автор | Kai-ming Zhang |
| Автор | Xi-de Xie |
| Дата выпуска | 1996-12-02 |
| dc.description | We report ab initio calculations of the electronic structures and the band line-ups of heterocrystalline superlattices (HSLs) , and (n = 1,2,3). The band line-ups at both the (3C-BN)/(2H-BN) interface and the (3C-SiC)/(2H-SiC) interface are found to be type II, with valence-band offsets of 0.16 eV and 0.14 eV and conduction-band offsets of up to 1.56 eV and 1.08 eV respectively. For the (3C-GaN)/(2H-GaN) interface, the valence-band offset is found to be almost zero, and the conduction-band offset is about 0.4 eV. It is found that the band gaps in the HSLs decrease rapidly with the increase of the slab thickness. This `abnormal' band-gap behaviour is shown to be due to the internal electric fields induced by the spontaneous polarizations in the 2H structures. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Band line-ups and band-gap behaviour of new-type superlattices (3C-BN)/(2H-BN), (3C-GaN)/(2H-GaN) and (3C-SiC)/(2H-SiC) |
| Тип | paper |
| DOI | 10.1088/0953-8984/8/49/012 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 8 |
| Первая страница | 10209 |
| Последняя страница | 10217 |
| Аффилиация | San-huang Ke; Applied Surface Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China |
| Аффилиация | Kai-ming Zhang; Applied Surface Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China |
| Аффилиация | Xi-de Xie; Applied Surface Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China |
| Выпуск | 49 |
