| Автор | Sverre Froyen |
| Дата выпуска | 1996-12-09 |
| dc.description | We present a method where Luttinger-like parameters extracted from first-principles calculations on small prototype systems are used to calculate near-band-gap states of much larger semiconductor heterostructures. The method can be used for small- and large-scale heterostructures with equal first-principles accuracy and it illustrates approximations that are implicit in the Luttinger model. GaAs - AlAs(001) superlattices are used to illustrate the method. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Linear combinations of constituent states: a first-principles Luttinger model |
| Тип | paper |
| DOI | 10.1088/0953-8984/8/50/027 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 8 |
| Первая страница | 11029 |
| Последняя страница | 11039 |
| Аффилиация | Sverre Froyen; National Renewable Energy Laboratory, Golden, CO 80401, USA |
| Выпуск | 50 |
