| Автор | H Suderow |
| Автор | J P Brison |
| Автор | Ch Marcenat |
| Автор | B Salce |
| Дата выпуска | 1996-02-19 |
| dc.description | Silicon doped with phosphorus undergoes a metal - insulator transition (MIT) at a critical phosphorus concentration. We present here data for the thermal diffusivity D of an insulating sample of Si:P very near the MIT. We describe briefly our method for measuring the dependence on the magnetic field (H) of D at very low temperatures ( mK). We present also data for the magnetoresistivity and the thermal conductivity of the same sample, and the calculated specific heat . We compare with earlier direct measurements, and we try to explain the behaviour of D, , and taking into account the complex situation in Si:P. We show that the measurement of D at very low temperatures and under a magnetic field can be a fruitful way of extracting information about the physics of doped semiconductors. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Thermal diffusivity and conductivity measurements for Si:P near the metal - insulator transition |
| Тип | paper |
| DOI | 10.1088/0953-8984/8/8/011 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 8 |
| Первая страница | 999 |
| Последняя страница | 1009 |
| Выпуск | 8 |
