| Автор | E Z Kurmaev |
| Автор | S N Shamin |
| Автор | V R Galakhov |
| Автор | V I Sokolov |
| Автор | M H Ludwig |
| Автор | R E Hummel |
| Дата выпуска | 1997-03-24 |
| dc.description | The paper presents a comparison of x-ray emission spectra of porous silicon (P-Si) and of spark-processed silicon (sp-Si). Both types of Si structure display strong photoluminescence in the visible range of the spectrum. Porous samples were prepared by anodization of and Si wafers. Whereas for the P-Si processed from Si the presence of some amorphous silicon is detected, the x-ray emission spectra of porous Si prepared from Si display a higher content of . For spark-processed Si the x-ray emission spectra reveal a much stronger degree of oxidation which extends to depths larger than 10 000 Å. Furthermore, the chemical state of silicon atoms of sp-Si measured at the centre of the processed area is close to that of silicon dioxide, and depends slightly on the emission maximum. Specifically, green-photoluminescing sp-Si shows a higher degree of oxidation than the blue-luminescing specimen. However, the depth of oxidation consistently decreases for areas with weak photoluminescence and without photoluminescence. Possible origins for the photoluminescence are discussed. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | X-ray emission spectra and the effect of oxidation on the local structure of porous and spark-processed silicon |
| Тип | paper |
| DOI | 10.1088/0953-8984/9/12/013 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 9 |
| Первая страница | 2671 |
| Последняя страница | 2681 |
| Выпуск | 12 |
