| Автор | R Asal |
| Автор | P E Rivers |
| Автор | H N Rutt |
| Дата выпуска | 1997-07-21 |
| dc.description | Atomic-scale structure changes in gallium lanthanum sulphide bulk glass and ablation-deposited thin films have been studied by the x-ray absorption fine-structure (EXAFS) technique. EXAFS spectra have been recorded at the sulphur and gallium K edges, and the lanthanum edge, and this has allowed us to construct a detailed picture of the local structure in bulk glass and thin films. The EXAFS results indicate that there is chemical disorder in the structural network of the GLS thin films, although chemical ordering is predominant in bulk GLS glass. The existence of `wrong bonds', i.e. Ga - Ga and S - S bonds, in the structure has been discussed and correlated with optical absorption experiments undertaken on the same samples to provide a consistent picture of the local structure. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | A structural study of gallium lanthanum sulphide glass bulk and thin films by x-ray absorption fine structure spectroscopy |
| Тип | paper |
| DOI | 10.1088/0953-8984/9/29/007 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 9 |
| Первая страница | 6217 |
| Последняя страница | 6230 |
| Аффилиация | R Asal; Infrared Science and Technology, Department of Electronics and Computer Science, University of Southampton, Highfield, Southampton SO17 1BJ, UK |
| Аффилиация | P E Rivers; Infrared Science and Technology, Department of Electronics and Computer Science, University of Southampton, Highfield, Southampton SO17 1BJ, UK |
| Аффилиация | H N Rutt; Infrared Science and Technology, Department of Electronics and Computer Science, University of Southampton, Highfield, Southampton SO17 1BJ, UK |
| Выпуск | 29 |
