| Автор | R Cimino |
| Автор | H Öfner |
| Автор | F P Netzer |
| Дата выпуска | 1997-10-06 |
| dc.description | Electron energy loss spectroscopy and high-resolution core level photoemission spectra of the interface formed between In and the GaAs(110) surface at different substrate temperatures and in the transition from low (LT) to room temperature (RT) are presented. We demonstrate that the interface formed after RT In deposition is morphologically different to the one obtained by depositing the same amount of In at LT and subsequently warming up to RT: for RT deposition the In clusters are separated by the bare, unperturbed GaAs surface, whereas on the temperature-cycled surface after the transition a monolayer of In bonded to surface As atoms covers the intercluster region. We analyse the bonding of In on the In - GaAs interfaces and discuss the role played by the substrate geometry in determining the kinetics of the system. A mechanism for the observed non-equilibrium effects in the growth mode of In on GaAs(110) is proposed. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Temperature effects in the bonding and growth mode of In on GaAs(110) |
| Тип | paper |
| DOI | 10.1088/0953-8984/9/40/010 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 9 |
| Первая страница | 8433 |
| Последняя страница | 8441 |
| Выпуск | 40 |
