Silicon quantum dot superlattice and metallic conducting behaviour in porous silicon
Qianwang Chen; X-J Li; Shuyuan Zhang; Jingsheng Zhu; Guien Zhou; K Q Ruan; Yuheng Zhang
Журнал:
Journal of Physics: Condensed Matter
Дата:
1997-10-13
Аннотация:
A metallic conducting effect has been observed in a blue emitting porous silicon sample. In the sample, which was prepared using a hydrothermal etching process followed by oxidation treatment at for 30 s, it was observed that the resistance decreased linearly with decreasing temperature and became constant near 10 K. A possible mechanism for the observed effect is discussed in view of the silicon quantum dot superlattice structure observed in the sample.
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