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Автор Kjeld Pedersen
Автор Per Morgen
Дата выпуска 1997-11-03
dc.description Room-temperature deposition and growth of Au on Si(111) is investigated by means of optical second-harmonic generation. The process on the clean surface is compared under identical conditions to that of the oxygen passivated surface. Ordered Au/Si interfaces occur in both cases. For the surface the interface ordering starts after deposition of 4 monolayers, completing the formation of a phase with some dissolved Si, after which a continuous Au film grows between the substrate and the mixed phase. Oxygen passivation causes interface ordering from a lower Au coverage and a considerably higher degree of interface order. Oscillating second-harmonic generation intensities versus coverage with periods in the 12 - 17 monolayer range show that quantum well states formed in the Au film are responsible for the second-harmonic signal. The annealing behaviours of the Au/Si structures are also studied, and discussed with the inclusion of photoemission results.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Room-temperature deposition and growth of Au on clean and oxygen passivated Si(111) surfaces investigated by optical second-harmonic generation
Тип paper
DOI 10.1088/0953-8984/9/44/006
Electronic ISSN 1361-648X
Print ISSN 0953-8984
Журнал Journal of Physics: Condensed Matter
Том 9
Первая страница 9497
Последняя страница 9506
Выпуск 44

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