| Автор | Masao Iwamatsu |
| Автор | Makoto Fujiwara |
| Автор | Naohisa Happo |
| Автор | Kenju Horii |
| Дата выпуска | 1997-11-10 |
| dc.description | The one- and two-electron ground-state energies of singly and doubly charged silicon (Si) dots modelled by a sphere covered with a silicon dioxide layer embedded in various dielectric media can be calculated as functions of the sphere size and the thickness of the oxide by extending the work of Allan et al and Babic et al. The electron-self-polarization, electron - electron and electron-polarization energies are treated by first-order perturbation theory, taking the confined free-electron state as the unperturbed state. By changing the thickness of the oxides or the surrounding dielectric medium, the applied voltage required for the tunnelling of one electron when one electron already exists inside the dot is greatly reduced. We discuss the possible consequence of electron tunnelling in a Si dot and the electroluminescence of porous Si. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Effects of dielectric discontinuity on the ground-state energy of charged Si dots covered with a layer |
| Тип | paper |
| DOI | 10.1088/0953-8984/9/45/016 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 9 |
| Первая страница | 9881 |
| Последняя страница | 9892 |
| Аффилиация | Masao Iwamatsu; Department of Computer Engineering, Hiroshima City University, 3-4-1 Ozuka-higashi, Asaminami-ku, Hiroshima 731-31, Japan |
| Аффилиация | Makoto Fujiwara; Department of Computer Engineering, Hiroshima City University, 3-4-1 Ozuka-higashi, Asaminami-ku, Hiroshima 731-31, Japan |
| Аффилиация | Naohisa Happo; Department of Computer Engineering, Hiroshima City University, 3-4-1 Ozuka-higashi, Asaminami-ku, Hiroshima 731-31, Japan |
| Аффилиация | Kenju Horii; Department of Computer Engineering, Hiroshima City University, 3-4-1 Ozuka-higashi, Asaminami-ku, Hiroshima 731-31, Japan |
| Выпуск | 45 |
