| Автор | V Pische |
| Автор | L Peccoud |
| Автор | P Lassagne |
| Дата выпуска | 1992-08-01 |
| dc.description | The aim of this study is to characterize the SiO<sub>2</sub> etching process developed in a magnetic triode experimental system fed by C<sub>2</sub>F<sub>6</sub>. The effect of some experimental parameter variation, namely of pressure, C<sub>2</sub>F<sub>6</sub> flow, magnetic field intensity, upper electrode power (40 MHz), lower electrode power (13.56 MHz) on the SiO<sub>2</sub> etch rate has been studied and related to the absolute value of the self-induced voltage of the lower substrate electrode. The gas phase has been investigated by means of actinometric optical emission spectroscopy. Good correlation has been found between the gas density trends of CF<sub>2</sub> radicals and F atoms and the behaviour of etch rate, showing a significant dependence of the SiO<sub>2</sub> etching rate on both ion energy and F:CF<sub>2</sub> density ratio. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Actinometric study on SiO<sub>2</sub> etching by a dual-frequency magnetic triode reactor |
| Тип | paper |
| DOI | 10.1088/0963-0252/1/3/002 |
| Electronic ISSN | 1361-6595 |
| Print ISSN | 0963-0252 |
| Журнал | Plasma Sources Science and Technology |
| Том | 1 |
| Первая страница | 151 |
| Последняя страница | 155 |
| Аффилиация | V Pische; LETI, DMEL, CENG, Grenoble, France |
| Аффилиация | L Peccoud; LETI, DMEL, CENG, Grenoble, France |
| Аффилиация | P Lassagne; LETI, DMEL, CENG, Grenoble, France |
| Выпуск | 3 |
