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Автор R J Nicholas
Автор R G Clark
Автор A Usher
Автор J R Mallett
Автор A M Suckling
Автор J J Harris
Автор C T Foxon
Дата выпуска 1987-01-01
dc.description A description is given of the occurrence of fractional quantum Hall effects, and how these are influenced by the presence of disorder. It is shown that when electrons are photoexcited into a GaAs-GaAlAs heterojunction, the fractional state existing at a Landau level occupancy of 7/5 can dominate over that at 4/3. Activation energy measurements of the resistivity show how the energy gap of the fractional states is reduced by the presence of disorder. A new method of analysis of the resistivity minima is presented which is used to give information on the correlation length of the many body ground state.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Systematic Studies of the Fractional Quantum Hall Effect
Тип paper
DOI 10.1088/0031-8949/1987/T19A/012
Electronic ISSN 1402-4896
Print ISSN 0031-8949
Журнал Physica Scripta
Том 1987
Первая страница 72
Последняя страница 78
Выпуск T19A

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