Автор | R J Nicholas |
Автор | R G Clark |
Автор | A Usher |
Автор | J R Mallett |
Автор | A M Suckling |
Автор | J J Harris |
Автор | C T Foxon |
Дата выпуска | 1987-01-01 |
dc.description | A description is given of the occurrence of fractional quantum Hall effects, and how these are influenced by the presence of disorder. It is shown that when electrons are photoexcited into a GaAs-GaAlAs heterojunction, the fractional state existing at a Landau level occupancy of 7/5 can dominate over that at 4/3. Activation energy measurements of the resistivity show how the energy gap of the fractional states is reduced by the presence of disorder. A new method of analysis of the resistivity minima is presented which is used to give information on the correlation length of the many body ground state. |
Формат | application.pdf |
Издатель | Institute of Physics Publishing |
Название | Systematic Studies of the Fractional Quantum Hall Effect |
Тип | paper |
DOI | 10.1088/0031-8949/1987/T19A/012 |
Electronic ISSN | 1402-4896 |
Print ISSN | 0031-8949 |
Журнал | Physica Scripta |
Том | 1987 |
Первая страница | 72 |
Последняя страница | 78 |
Выпуск | T19A |