| Автор | Jagdeep Shah |
| Дата выпуска | 1987-01-01 |
| dc.description | Investigation of the time evolution of extremely nonequilibrium charge carriers photoexcited into a semiconductor by a femtosecond laser gives valuable information about various scattering processes in the semiconductor. We describe here (i) an excite-and-probe experiment in GaAs quantum wells which measures the time evolution of the athermal distribution produced by the laser and thus gives information about carrier-carrier scattering processes and (ii) a luminescence experiment in GaAs and GaAs quantum wells which gives information about intervalley scattering of electrons in the conduction band. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Spectroscopy of Extremely Nonequilibrium Charge Carriers in GaAs and GaAs Quantum Wells |
| Тип | paper |
| DOI | 10.1088/0031-8949/1987/T19A/023 |
| Electronic ISSN | 1402-4896 |
| Print ISSN | 0031-8949 |
| Журнал | Physica Scripta |
| Том | 1987 |
| Первая страница | 166 |
| Последняя страница | 170 |
| Аффилиация | Jagdeep Shah; AT&T Bell Laboratories, Holmdel, NJ 07733, USA |
| Выпуск | T19A |
