| Автор | Hans-Erik Nilsson |
| Автор | Ulf Sannemo |
| Автор | C Sture Petersson |
| Дата выпуска | 1994-01-01 |
| dc.description | The I-V characteristics of the Permeable Base Transistor (PBT) has been investigated in order to find a simple and practical model for use in circuit designs. Two possible approaches has been discussed, a one-dimensional analytical solution and a semi-analytical solution mixing analytical and empirical methods. The semi-analytical model developed in this paper offers high accuracy and a simple and fast evaluation. All model parameters can be extracted from a set of I-V curves from two typical transistors with different threshold voltages. An analytical small signal model has been developed that agrees very well with two-dimensional simulations. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | A semi-analytic model of the permeable base transistor |
| Тип | paper |
| DOI | 10.1088/0031-8949/1994/T54/039 |
| Electronic ISSN | 1402-4896 |
| Print ISSN | 0031-8949 |
| Журнал | Physica Scripta |
| Том | 1994 |
| Первая страница | 159 |
| Последняя страница | 164 |
| Выпуск | T54 |
