| dc.description |
The changes of the thicknesses of plasma oxidized ultrathin silicon dioxide layers have been studied after they have been kept in room air. The thickness increases faster in the beginning and saturates then, so that the total increasement is typically no more than about 1 nm. The surface quality, produced by the oxidation process, is likely to be the main factor which affects the amount of increase. To produce very stable layers with nonreactive surfaces one has to adjust the oxidation temperature and the native oxide removal very carefully. |
