| Автор | A Yu Kuznetsov |
| Автор | H H Radamson |
| Автор | B G Svensson |
| Автор | W-X Ni |
| Автор | G V Hansson |
| Автор | A Nylandsted Larsen |
| Дата выпуска | 1999-01-01 |
| dc.description | The influence of oxidation of a Si-cap layer on the thermal stability of Si/Si<sub>0.863</sub>Ge<sub>0.137</sub>/Si heterostructures is investigated by high resolution x-ray diffraction. The role of the surface modification is extracted by comparison of dry oxygen and inert (nitrogen) ambient anneals at 810 and 900°C. Anomalous strain relaxation was observed in the sample oxidized at 810°C. It is hypothesized that the effect of anomalous strain evolution deals with the enhanced surface diffusion and roughening at the Si/SiGe interface. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Comparison of strain relaxation in Si/SiGe/Si heterostructures after annealing in oxidizing and inert atmospheres |
| Тип | paper |
| DOI | 10.1238/Physica.Topical.079a00202 |
| Electronic ISSN | 1402-4896 |
| Print ISSN | 0031-8949 |
| Журнал | Physica Scripta |
| Том | 1999 |
| Первая страница | 202 |
| Последняя страница | 205 |
| Выпуск | T79 |
