| Автор | P Feichtinger |
| Автор | B Poust |
| Автор | M S Goorsky |
| Автор | D Oster |
| Автор | J Chambers |
| Автор | J Moreland |
| Дата выпуска | 2001-05-21 |
| dc.description | We studied the propagation and interaction of individual misfit dislocations in strained p/p<sup>+</sup> Si wafers. Relaxation of misfit strain occurs at the wafer edge during high-temperature epitaxial growth. The thick epitaxial layer (about five times the critical thickness) and low misfit dislocation densities (~100 cm<sup>-1</sup>) are highly compatible with a non-destructive study via x-ray topography. We determined that as a gliding 60° misfit dislocation encounters a strain field in its path, it cross-slips to a specific lattice direction. Misfit dislocation segments with either an orthogonal or quasi-parallel (in the case of the off-oriented substrate) glide direction of the Burger's vector were determined to act as cross-slip initiation sites. This interaction happens during layer growth as well as post-growth annealing cycles. We did not find a case of misfit dislocation blocking during sample annealing. No occurrence of annihilation or multiplication reaction of crossing dislocations was detected during our studies. We show that, due to geometry, a distribution of tilt across the wafer surface results from preferential cross-slipping events. Our results are applicable to early stages of strain relaxation in other strained systems, like graded buffer layers. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Misfit dislocation interactions in low mismatch p/p<sup>+</sup> Si |
| Тип | paper |
| DOI | 10.1088/0022-3727/34/10A/326 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 34 |
| Первая страница | A128 |
| Последняя страница | A132 |
| Выпуск | 10A |
