| Автор | I L Shul'pina |
| Автор | E V Astrova |
| Автор | V V Ratnikov |
| Автор | A D Remenyuk |
| Автор | A G Tkachenko |
| Дата выпуска | 2001-05-21 |
| dc.description | Microchannel (macroporous) silicon obtained by photoelectrochemical etching of cylindrical pores with high aspect ratio of the pore length to the diameter has been studied by x-ray diffractometry and topography. It is shown that the crystal lattice of microchannel silicon is practically not distorted. The channels induce additional diffuse scattering of x-rays. However, thermal oxidation leads to strong distortion of planes, both parallel and normal to the crystal surface, and also to the generation of dislocations. It is shown that x-ray topography allows one to obtain the image of an inner boundary between microchannel silicon and the substrate, to estimate its quality and to define its position in the sample non-destructively. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Characterization of microchannel Si by HRXD and topography |
| Тип | paper |
| DOI | 10.1088/0022-3727/34/10A/329 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 34 |
| Первая страница | A140 |
| Последняя страница | A143 |
| Аффилиация | I L Shul'pina; Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya, 26, 194021, St-Petersburg, Russia |
| Аффилиация | E V Astrova; Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya, 26, 194021, St-Petersburg, Russia |
| Аффилиация | V V Ratnikov; Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya, 26, 194021, St-Petersburg, Russia |
| Аффилиация | A D Remenyuk; Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya, 26, 194021, St-Petersburg, Russia |
| Аффилиация | A G Tkachenko; Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya, 26, 194021, St-Petersburg, Russia |
| Выпуск | 10A |
