Morphology evolution of thin Ni film on MgO(100) substrate
C Lin; Y H Xu; H Naramoto; P Wei; S Kitazawa; K Narumi; C Lin; Takasaki-Branch, Advanced Science Research Center, Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan; Y H Xu; Takasaki-Branch, Advanced Science Research Center, Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan; H Naramoto; Takasaki-Branch, Advanced Science Research Center, Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan; P Wei; Takasaki-Branch, Advanced Science Research Center, Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan; S Kitazawa; Takasaki-Branch, Advanced Science Research Center, Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan; K Narumi; Takasaki-Branch, Advanced Science Research Center, Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
Журнал:
Journal of Physics D: Applied Physics
Дата:
2002-08-07
Аннотация:
Thin Ni films with various thicknesses were deposited onto the MgO(100) single crystal substrate at 400°C. The morphology measured by atomic force microscope shows an apparent correlation with the thickness. The initial 10 Å film is composed of small round Ni islands. In the 25 Å film, pinholes with narrow size distribution occur, which show local periodic distribution in some regions when the thickness of the film reaches 75 Å. The driving force for such a structure is attributed to the elastic strain energy. When the film is about 100 Å thick, the pinholes begin to disappear, due to filling by the late-coming atoms and covering of upper islands.
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