| Автор | Chandan Banerjee |
| Автор | Arindam Sarker |
| Автор | A K Barua |
| Дата выпуска | 2002-12-07 |
| dc.description | Low gap (∼1.6 eV) a-Si : H films have been prepared by using helium diluted silane as source gas mixture in the usual radiofrequency plasma enhanced chemical vapour deposition method (13.56 MHz). The films have characteristics suitable for use as active layer of the bottom cell of a dual gap double junction a-Si solar cell. The films have been prepared at different rf-power densities and chamber pressures and characterized in detail. The role played by helium in improving the structure of a-Si : H and lowering of the band gap has been analysed. The cells fabricated with the said material show higher short circuit current density (J<sub>sc</sub>8.9 mA cm<sup>−2</sup>) and lower light induced degradation (9–10) before stabilization. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Development of stabilized dual gap double junction a-Si solar cell using helium diluted a-Si : H intrinsic layer |
| Тип | paper |
| DOI | 10.1088/0022-3727/35/23/305 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 35 |
| Первая страница | 3060 |
| Последняя страница | 3064 |
| Аффилиация | Chandan Banerjee; Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700 032, India |
| Аффилиация | Arindam Sarker; Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700 032, India |
| Аффилиация | A K Barua; Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700 032, India |
| Выпуск | 23 |
