| Автор | M L Chenene |
| Автор | V Alberts |
| Дата выпуска | 2003-01-07 |
| dc.description | In this study, device quality chalcopyrite thin films were prepared by the thermal evaporation of pulverized compound materials from a single crucible. The starting materials were heated from ambient temperature to around 1450°C over a period of only 10 min. This `semi-flash' process prevented many of the reported shortcomings of standard flash processes. The final thicknesses and compositions of the chalcopyrite thin films were determined by the predetermined masses of the starting materials. The material quality (i.e. surface morphologies, formation of crystalline phases and in-depth compositional uniformity) of the films was evaluated at substrate temperatures ranging between 250°C and 500°C. From these studies, optimum growth conditions were determined for the deposition of device quality absorber material. The conversion efficiencies of completed glass/Mo/Cu(In,Ga)Se<sub>2</sub>/CdS/ZnO solar cell devices were correlated against the material quality of the respective absorber films. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Structural and compositional properties of Cu(In,Ga)Se<sub>2</sub> thin films prepared by the thermal evaporation of compound materials |
| Тип | paper |
| DOI | 10.1088/0022-3727/36/1/308 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 36 |
| Первая страница | 56 |
| Последняя страница | 61 |
| Аффилиация | M L Chenene; Department of Physics, Rand Afrikaans University, PO Box 524, Auckland park, 2006, Johannesburg, South Africa |
| Аффилиация | V Alberts; Department of Physics, Rand Afrikaans University, PO Box 524, Auckland park, 2006, Johannesburg, South Africa |
| Выпуск | 1 |
