Acceptor formation mechanisms determination from electrical and optical properties of p-type ZnO doped with lithium and nitrogen
Wang, X H; Yao, B; Wei, Z P; Sheng, D Z; Zhang, Z Z; Li, B H; Lu, Y M; Zhao, D X; Zhang, J Y; Fan, X W; Guan, L X; Cong, C X; Wang, X H; Key Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, People's Republic of China; Graduate School of Chinese Academy of Sciences, Beijing 100039, People's Republic of China; Yao, B; Key Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, People's Republic of China; Department of Physics, Jlin University, Changchun, 130023, People's Republic of China;; Wei, Z P; Key Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, People's Republic of China; Graduate School of Chinese Academy of Sciences, Beijing 100039, People's Republic of China; Sheng, D Z; Key Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, People's Republic of China; Zhang, Z Z; Key Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, People's Republic of China; Li, B H; Key Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, People's Republic of China; Lu, Y M; Key Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, People's Republic of China; Zhao, D X; Key Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, People's Republic of China; Zhang, J Y; Key Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, People's Republic of China; Fan, X W; Key Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, People's Republic of China; Guan, L X; Department of Physics, Jlin University, Changchun, 130023, People's Republic of China; Cong, C X; Department of Physics, Jlin University, Changchun, 130023, People's Republic of China
Журнал:
Journal of Physics D: Applied Physics
Дата:
2006-11-07
Аннотация:
A lithium (Li) and nitrogen (N) dual-doped p-type ZnO film (ZnO : (Li,N)) was deposited on c-plane sapphire by RF-magnetron sputtering of Zn–2 at.% Li alloy using mixed gases of oxygen and nitrogen and then annealing in N<sub>2</sub> flow. It has a carrier concentration of 3.07 × 10<sup>16</sup> cm<sup>−3</sup> and Hall mobility of 1.74 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>. XPS measurement shows that there are Li<sub>Zn</sub>–N complexes in the p-type ZnO : (Li,N), which are demonstrated by photoluminescence measured at various temperatures and different excitation powers to be acceptors and responsible for p-type conductivity of the ZnO : (Li,N). The optical level of the Li<sub>Zn</sub>–N complex acceptor is estimated to be about 126 meV by measurement of emission energy of free electron to the acceptor level.
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