| Автор | Sun, J W |
| Автор | Lu, Y M |
| Автор | Liu, Y C |
| Автор | Shen, D Z |
| Автор | Zhang, Z Z |
| Автор | Li, B H |
| Автор | Zhang, J Y |
| Автор | Yao, B |
| Автор | Zhao, D X |
| Автор | Fan, X W |
| Дата выпуска | 2007-11-07 |
| dc.description | ZnO/Mg<sub>0.2</sub>Zn<sub>0.8</sub>O multiple quantum wells (MQWs) were grown on a c-plane sapphire (Al<sub>2</sub>O<sub>3</sub>) substrate by plasma-assisted molecular beam epitaxy. Both the spontaneous and the stimulated emission properties at room temperature (RT) in MQWs were studied under lower and higher excitation densities. The strong emission at 3.330 eV was observed in the MQWs at RT, which was attributed to the free exciton transition by the temperature-dependent photoluminescence measurement. Significantly, RT stimulated emission caused by inelastic exciton–exciton scattering was observed in the ZnO/Mg<sub>0.2</sub>Zn<sub>0.8</sub>O MQWs grown on Al<sub>2</sub>O<sub>3</sub>. Thus, the exciton binding energy was determined to be 122 meV in our MQWs. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2007 IOP Publishing Ltd |
| Название | Room temperature excitonic spontaneous and stimulated emission properties in ZnO/MgZnO multiple quantum wells grown on sapphire substrate |
| Тип | paper |
| DOI | 10.1088/0022-3727/40/21/012 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 40 |
| Первая страница | 6541 |
| Последняя страница | 6544 |
| Последняя страница | 6544 |
| Аффилиация | Sun, J W; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, People's Republic of China; Graduate School of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China |
| Аффилиация | Lu, Y M; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, People's Republic of China; |
| Аффилиация | Liu, Y C; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, People's Republic of China; Center for Advanced Optoelectronic Functional Material Research, Northeast Normal University, Changchun 130024, People's Republic of China; |
| Аффилиация | Shen, D Z; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, People's Republic of China |
| Аффилиация | Zhang, Z Z; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, People's Republic of China |
| Аффилиация | Li, B H; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, People's Republic of China |
| Аффилиация | Zhang, J Y; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, People's Republic of China |
| Аффилиация | Yao, B; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, People's Republic of China |
| Аффилиация | Zhao, D X; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, People's Republic of China |
| Аффилиация | Fan, X W; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, People's Republic of China |
| Выпуск | 21 |
