Characterizations of single-phased cubic Mg<sub>0.5</sub>Zn<sub>0.5</sub>O prepared at high pressure and high temperature
Qin, J M; Yao, B; Jia, X P; Shan, C X; Zhang, J Y; Ma, H A; Shen, D Z; Qin, J M; Key Lab of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin 130033, People's Republic of China;; Yao, B; Key Lab of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin 130033, People's Republic of China; National Lab of Superhard Materials, Jilin University, Changchun, Jilin 130012, People's Republic of China;; Jia, X P; National Lab of Superhard Materials, Jilin University, Changchun, Jilin 130012, People's Republic of China;; Shan, C X; Key Lab of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin 130033, People's Republic of China; Zhang, J Y; Key Lab of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin 130033, People's Republic of China; Ma, H A; National Lab of Superhard Materials, Jilin University, Changchun, Jilin 130012, People's Republic of China; Shen, D Z; Key Lab of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin 130033, People's Republic of China
Журнал:
Journal of Physics D: Applied Physics
Дата:
2008-08-07
Аннотация:
We report the preparation of a single-phased cubic Mg<sub>0.5</sub>Zn<sub>0.5</sub>O semiconductor at high pressure and high temperature(HPHT) in this paper. Phase separation that was frequently observed in Mg<sub>0.5</sub>Zn<sub>0.5</sub>O alloys at a normal pressure was avoided in our case. The formation of the single-phased Mg<sub>0.5</sub>Zn<sub>0.5</sub>O resulted from the HPHT applied during the preparation process. The Mg<sub>0.5</sub>Zn<sub>0.5</sub>O has a maximum absorption at about 265 nm and a sharp absorption edge at about 300 nm. The single-phased Mg<sub>0.5</sub>Zn<sub>0.5</sub>O with an abrupt absorption edge obtained in this paper is of significance in realizing high-performance ultraviolet photodetectors based on MgZnO.
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