| Автор | Ma, Beihai |
| Автор | Kwon, Do-Kyun |
| Автор | Narayanan, Manoj |
| Автор | (Balu) Balachandran, U |
| Дата выпуска | 2008-10-21 |
| dc.description | We have grown crack-free antiferroelectric (AFE) Pb<sub>0.92</sub>La<sub>0.08</sub>Zr<sub>0.95</sub>Ti<sub>0.05</sub>O<sub>3</sub> (PLZT) films on nickel foils by chemical solution deposition. To eliminate the parasitic effect caused by the formation of a low-permittivity interfacial oxide, we applied a conductive buffer layer of lanthanum nickel oxide (LNO) on the nickel foil by chemical solution deposition prior to the PLZT deposition. Use of the LNO buffer allowed high-quality film-on-foil capacitors to be prepared at high temperatures in air. With the AFE PLZT deposited on LNO-buffered Ni foils, we observed field-induced phase transformations of AFE to ferroelectric (FE). The AFE-to-FE phase transition field, E<sub>AF</sub> = 260 kV cm<sup>−1</sup>, and the reverse phase transition field, E<sub>FA</sub> = 220 kV cm<sup>−1</sup>, were measured at room temperature on a ∼1.15 µm thick PLZT film grown on LNO-buffered Ni foils. The relative permittivities of the AFE and FE states were ∼530 and ∼740, respectively, with dielectric loss <0.05 at room temperature. P–E hysteresis loop measured at room temperature confirmed the field-induced phase transition. The time-relaxation current density was investigated under various applied electric fields. The leakage current density of a 1.15 µm thick AFE PLZT film-on-foil capacitor was 5 × 10<sup>−9</sup> A cm<sup>−2</sup> at room temperature under 87 kV cm<sup>−1</sup> applied field. The breakdown behaviour of the AFE PLZT film-on-foil capacitors was studied by Weibull analysis. The mean breakdown time decreased exponentially with increasing applied field. The mean breakdown time was over 610 s when a field of 1.26 MV cm<sup>−1</sup> was applied to a 1.15 µm thick AFE PLZT film-on-foil capacitor. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2008 IOP Publishing Ltd |
| Название | Leakage current characteristics and dielectric breakdown of antiferroelectric Pb<sub>0.92</sub>La<sub>0.08</sub>Zr<sub>0.95</sub>Ti<sub>0.05</sub>O<sub>3</sub> film capacitors grown on metal foils |
| Тип | paper |
| DOI | 10.1088/0022-3727/41/20/205003 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 41 |
| Первая страница | 205003 |
| Последняя страница | 205009 |
| Аффилиация | Ma, Beihai; |
| Аффилиация | Kwon, Do-Kyun; |
| Аффилиация | Narayanan, Manoj; Energy Systems Division, Argonne National Laboratory, Argonne, IL 60439, USA |
| Аффилиация | (Balu) Balachandran, U; Energy Systems Division, Argonne National Laboratory, Argonne, IL 60439, USA |
| Выпуск | 20 |
