Dilute magnetic insulator with T<sub>c</sub> above room temperature based on Gd implanted MgO
Li, Lin; Fang, Xiangming; Zeng, Changgan; Li, Lin; Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China; Fang, Xiangming; Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China; Zeng, Changgan; Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
Журнал:
Journal of Physics D: Applied Physics
Дата:
2009-08-07
Аннотация:
Ferromagnetism is realized by implanting 300 keV Gd ions into MgO single crystals, with T<sub>c</sub> well above room temperature. Structural and magnetic investigations reveal no detectable second phase. Ferromagnetism is absent in MgO crystals implanted by nonmagnetic ions, which implies that the lattice defects created by destructive implantation cannot account for the observed ferromagnetism in the Gd implanted MgO alone. The ferromagnetic behaviour disappears in the Gd implanted MgO after annealing to eliminate the lattice defects. The long-range ferromagnetic ordering in the Gd as-implanted MgO crystal is likely to be stabilized by defect-mediated exchange between magnetic moments localized on Gd ions.
329.4Кб