| Автор | Sui, Y R |
| Автор | Yao, B |
| Автор | Hua, Z |
| Автор | Xing, G Z |
| Автор | Huang, X M |
| Автор | Yang, T |
| Автор | Gao, L L |
| Автор | Zhao, T T |
| Автор | Pan, H L |
| Автор | Zhu, H |
| Автор | Liu, W W |
| Автор | Wu, T |
| Дата выпуска | 2009-03-21 |
| dc.description | A p-type B–N codoped ZnO film was grown on quartz by magnetron sputtering and post-annealing techniques. It has room-temperature resistivity of 2.3 Ω cm, Hall mobility of 11 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> and carrier concentration of 1.2 × 10<sup>17</sup> cm<sup>−3</sup>, better than the electrical properties of the N-doped p-type ZnO. The ZnO homojunction fabricated by deposition of an undoped n-type ZnO layer on the B–N codoped p-type ZnO layer showed clear p–n diode characteristics. Differing from the N-doped ZnO, the low-temperature photoluminescence spectrum of the codoped ZnO film consists of two dominant peaks located at 3.096 eV and 3.251 eV, respectively. The former is due to radiative electron transition from the conduction band to the Zn vacancy acceptor level, and the latter due to recombination of the donor–acceptor pair. The mechanism of p-type conductivity was discussed in this work. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2009 IOP Publishing Ltd |
| Название | Fabrication and properties of B–N codoped p-type ZnO thin films |
| Тип | paper |
| DOI | 10.1088/0022-3727/42/6/065101 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 42 |
| Первая страница | 65101 |
| Последняя страница | 65105 |
| Аффилиация | Sui, Y R; Department of Physics, Jilin University, Changchun 130023, People's Republic of China; Department of Physics, Jilin Normal University, Siping 136000, People's Republic of China |
| Аффилиация | Yao, B; Department of Physics, Jilin University, Changchun 130023, People's Republic of China; Changchun Institute of Optics, Fine Mechanics and Physics, Chinese, Academy of Sciences, Changchun 130021, People's Republic of China; |
| Аффилиация | Hua, Z; Department of Physics, Jilin Normal University, Siping 136000, People's Republic of China |
| Аффилиация | Xing, G Z; Department of Physics, Jilin University, Changchun 130023, People's Republic of China; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University 637371, Singapore |
| Аффилиация | Huang, X M; Department of Physics, Jilin University, Changchun 130023, People's Republic of China |
| Аффилиация | Yang, T; Department of Physics, Jilin University, Changchun 130023, People's Republic of China |
| Аффилиация | Gao, L L; Department of Physics, Jilin University, Changchun 130023, People's Republic of China |
| Аффилиация | Zhao, T T; Department of Physics, Jilin University, Changchun 130023, People's Republic of China |
| Аффилиация | Pan, H L; Department of Physics, Jilin University, Changchun 130023, People's Republic of China |
| Аффилиация | Zhu, H; Changchun Institute of Optics, Fine Mechanics and Physics, Chinese, Academy of Sciences, Changchun 130021, People's Republic of China |
| Аффилиация | Liu, W W; Changchun Institute of Optics, Fine Mechanics and Physics, Chinese, Academy of Sciences, Changchun 130021, People's Republic of China |
| Аффилиация | Wu, T; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University 637371, Singapore |
| Выпуск | 6 |
