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Автор Tang, Xiao-Wu
Автор Yang, Yong
Автор Kim, Woong
Автор Wang, Qian
Автор Qi, Pengfei
Автор Dai, Hongjie
Автор Xing, Lei
Дата выпуска 2005-02-07
dc.description Single-walled carbon nanotubes (SWNTs) are a new class of highly promising nanomaterials for future nano-electronics. Here, we present an initial investigation of the feasibility of using SWNT field effect transistors (SWNT-FETs) formed on silicon-oxide substrates and suspended FETs for radiation dosimetry applications. Electrical measurements and atomic force microscopy (AFM) revealed the intactness of SWNT-FET devices after exposure to over 1 Gy of 6 MV therapeutic x-rays. The sensitivity of SWNT-FET devices to x-ray irradiation is elucidated by real-time dose monitoring experiments and accumulated dose reading based on threshold voltage shift. SWNT-FET devices exhibit sensitivities to x-rays that are at least comparable to or orders of magnitude higher than commercial MOSFET (metal-oxide semiconductor field effect transistor) dosimeters and could find applications as miniature dosimeters for microbeam profiling and implantation.
Формат application.pdf
Издатель Institute of Physics Publishing
Копирайт 2005 IOP Publishing Ltd
Название Measurement of ionizing radiation using carbon nanotube field effect transistor
Тип note
DOI 10.1088/0031-9155/50/3/N02
Electronic ISSN 1361-6560
Print ISSN 0031-9155
Журнал Physics in Medicine and Biology
Том 50
Первая страница N23
Последняя страница N31
Аффилиация Tang, Xiao-Wu; Department of Chemistry, Stanford University, Stanford, CA 94305, USA; Department of Radiation Oncology, Stanford University, Stanford, CA 94305, USA
Аффилиация Yang, Yong; Department of Radiation Oncology, Stanford University, Stanford, CA 94305, USA
Аффилиация Kim, Woong; Department of Chemistry, Stanford University, Stanford, CA 94305, USA
Аффилиация Wang, Qian; Department of Chemistry, Stanford University, Stanford, CA 94305, USA
Аффилиация Qi, Pengfei; Department of Chemistry, Stanford University, Stanford, CA 94305, USA
Аффилиация Dai, Hongjie; Department of Chemistry, Stanford University, Stanford, CA 94305, USA
Аффилиация Xing, Lei; Department of Radiation Oncology, Stanford University, Stanford, CA 94305, USA
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