| Автор | Zhang Yuan-Chang |
| Автор | Huang Chang-Jun |
| Автор | Ye Xiao-Ling |
| Автор | Xu Bo |
| Автор | Ding Ding |
| Автор | Wang Ji-Zheng |
| Автор | Li Yue-Fa |
| Автор | Liu Feng-Qi |
| Автор | Wang Zhan-Guo |
| Дата выпуска | 2001-10-01 |
| dc.description | We have developed a new self-assembled quantum dot system where InGaAs dots are formed on an InAlAs wetting layer and embedded in the GaAs matrix. The structure is realized by special sample designation and demonstrated by low-temperature photoluminescence measurements. In contrast to the traditional InAs/GaAs quantum dots dominated by the ensemble effect, the temperature dependence of the photoluminescence of such a quantum dot structure behaves as decoupled quantum dots. This can be attributed to the enhanced potential confinement for the dots provided by a higher-energy barrier in the wetting layer. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Structure and Photoluminescence of InGaAs Quantum Dots Formed on an InAlAs Wetting Layer |
| Тип | paper |
| DOI | 10.1088/0256-307X/18/10/336 |
| Electronic ISSN | 1741-3540 |
| Print ISSN | 0256-307X |
| Журнал | Chinese Physics Letters |
| Том | 18 |
| Первая страница | 1411 |
| Последняя страница | 1414 |
| Выпуск | 10 |
