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Автор Zhou Jing
Автор Yang Zhi-Jian
Автор Xu Shi-Fa
Автор Zhu Xing
Автор Zhang Guo-Yi
Дата выпуска 2001-02-01
dc.description A thin film of GaN with the thickness of 1.0 µm was grown on α-Al<sub>2</sub>O<sub>3</sub> substrate by metal organic chemical vapour disposition and then a thick GaN film with thickness of 12 µm was grown in the halide vapour phase epitaxy system. Some macro-pyramids appeared on the surface of the sample. The macro-pyramids made the surface of the GaN film rough, which was harmful to the devices made by GaN materials. These defects changed the distribution of carrier concentration and affected the optical properties of GaN. The step height of the pyramids was about 30-40 nm measured by atomic force microscopy. A simple model was proposed to explain the macro-pyramid phenomenon compared with the growth spiral. The growth of the macro-pyramid was relative to the physical conditions in the reaction zone. Both increasing growth temperature and low pressure may reduce the pyramid size.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Macro-pyramid in GaN Film
Тип paper
DOI 10.1088/0256-307X/18/2/336
Electronic ISSN 1741-3540
Print ISSN 0256-307X
Журнал Chinese Physics Letters
Том 18
Первая страница 260
Последняя страница 262
Аффилиация Zhou Jing; Mesoscopic Physics National Laboratory and Department of Physics, Peking University, Beijing 100871
Аффилиация Yang Zhi-Jian; Mesoscopic Physics National Laboratory and Department of Physics, Peking University, Beijing 100871
Аффилиация Xu Shi-Fa; Mesoscopic Physics National Laboratory and Department of Physics, Peking University, Beijing 100871
Аффилиация Zhu Xing; Mesoscopic Physics National Laboratory and Department of Physics, Peking University, Beijing 100871
Аффилиация Zhang Guo-Yi; Mesoscopic Physics National Laboratory and Department of Physics, Peking University, Beijing 100871
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