| Автор | Gao Fei |
| Автор | Li Guo-Hua |
| Автор | Zhang Jian-Hui |
| Автор | Qin Fu-Guang |
| Автор | Yao Zhen-Yu |
| Автор | Liu Zhi-Kai |
| Автор | Wang Zhan-Guo |
| Автор | Lin Lan-Ying |
| Дата выпуска | 2001-03-01 |
| dc.description | A CeO<sub>2</sub> film with a thickness of about 80 nm was deposited by a mass-analysed low-energy dual ion beam deposition technique on an Si(111) substrate. Reflection high-energy electron diffraction and x-ray diffraction measurements showed that the film is a single crystal. The tetravalent state of Ce in the film was confirmed by x-ray photoelectron spectroscopy measurements, indicating that stoichiometric CeO<sub>2</sub> was formed. Violet/blue light emission (379.5 nm) was observed at room temperature, which may be tentatively explained by charge transitions from the 4f band to the valence band of CeO<sub>2</sub>. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Growth and Photoluminescence of Epitaxial CeO<sub>2</sub> Film on Si (111) Substrate |
| Тип | paper |
| DOI | 10.1088/0256-307X/18/3/345 |
| Electronic ISSN | 1741-3540 |
| Print ISSN | 0256-307X |
| Журнал | Chinese Physics Letters |
| Том | 18 |
| Первая страница | 443 |
| Последняя страница | 444 |
| Выпуск | 3 |
