Realization of Low Threshold of InGaAs/InAlAs Quantum Cascade Laser
Li Cheng-Ming; Liu Feng-Qi; Jin Peng; Wang Zhan-Guo; Li Cheng-Ming; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083; Liu Feng-Qi; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083; Jin Peng; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083; Wang Zhan-Guo; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
Журнал:
Chinese Physics Letters
Дата:
2003-09-01
Аннотация:
By optimizing the molecule beam epitaxy growth condition, the quality of quantum cascade (QC) material has greatly been improved. The spectrum of double x-ray diffraction indicates that the interface between the constituent layers is very smooth, the lattice mismatch between the epilayer and the substrate is less than 0.1%, and the periodicity fluctuation of the active region is not more than 4.2%. The QC laser with the emission wavelength of about 5.1 µm is operated at the threshold of 0.73 kA/cm<sup>2</sup> at liquid nitrogen temperature with the repetition rate of 10 kHz and at a duty cycle of 1%. Meanwhile, the performance of the laser can be improved with suitable post process techniques such as the metallic ohmic contact technology.
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