| Автор | Li Dong-Sheng |
| Автор | Chen Hong |
| Автор | Yu Hong-Bo |
| Автор | Zheng Xin-He |
| Автор | Huang Qi |
| Автор | Zhou Jun-Ming |
| Дата выпуска | 2004-05-01 |
| dc.description | Nonpolar a-plane GaN films were grown on r-plane sapphire substrates by metalorganic chemical vapour deposition (MOCVD) under various conditions. The surface morphologies of epitaxial films are studied by atomic force microscopy. The pit density and size both decrease with the increasing growth temperature, decreasing growth pressure or V/III ratio, while the roughness of the surface increases. Formation mechanisms of the pits in the films are discussed. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Growth of a-Plane GaN Films on r-Plane Sapphire Substrates by Metalorganic Chemical Vapour Deposition |
| Тип | paper |
| DOI | 10.1088/0256-307X/21/5/058 |
| Electronic ISSN | 1741-3540 |
| Print ISSN | 0256-307X |
| Журнал | Chinese Physics Letters |
| Том | 21 |
| Первая страница | 970 |
| Последняя страница | 971 |
| Аффилиация | Li Dong-Sheng; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
| Аффилиация | Chen Hong; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
| Аффилиация | Yu Hong-Bo; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
| Аффилиация | Zheng Xin-He; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
| Аффилиация | Huang Qi; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
| Аффилиация | Zhou Jun-Ming; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
| Выпуск | 5 |
