| Автор | Yu Hong-Bo |
| Автор | Chen Hong |
| Автор | Li Dong-Sheng |
| Автор | Zhou Jun-Ming |
| Дата выпуска | 2004-07-01 |
| dc.description | We investigate the structural and optical properties of InGaN-based multi-quantum wells grown on a–c plane sapphire substrates by atomic force microscopy, high-resolution x-ray diffraction and temperature-dependent photoluminescence measurements. The multi-quantum wells grown on a-plane sapphire substrate show stronger exciton localization effect compared with that grown on the c-plane substrate, although the threading dislocation densities in the two samples are almost the same. We attribute the results to the different in-plane strain of quantum well grown on different substrate orientations at the same growth temperature. Since the exciton localization effect plays a key role to obtain high efficiency InGaN-based optoelectronics devices, the presented result should be emphasized. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Structural and Optical Characteristics of InGaN/GaN Multi-Quantum Wells Grown on a- and c-Plane Sapphire Substrates |
| Тип | paper |
| DOI | 10.1088/0256-307X/21/7/039 |
| Electronic ISSN | 1741-3540 |
| Print ISSN | 0256-307X |
| Журнал | Chinese Physics Letters |
| Том | 21 |
| Первая страница | 1323 |
| Последняя страница | 1326 |
| Аффилиация | Yu Hong-Bo; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080 |
| Аффилиация | Chen Hong; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080 |
| Аффилиация | Li Dong-Sheng; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080 |
| Аффилиация | Zhou Jun-Ming; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080 |
| Выпуск | 7 |
