| Автор | Hou Lian-Ping |
| Автор | Zhu Hong-Liang |
| Автор | Zhou Fan |
| Автор | Wang Lu-Feng |
| Автор | Bian Jing |
| Автор | Wang Wei |
| Дата выпуска | 2005-07-01 |
| dc.description | A ridge laser diode monolithically integrated with a buried-ridge-structure dual-waveguide spot-size converter operating at 1.58 μm is successfully fabricated by means of low-energy ion implantation quantum well intermixing and asymmetric twin waveguide technology. The passive waveguide is optically combined with a laterally tapered active core to control the mode size. The devices emit in a single transverse and quasi single longitudinal mode with a side mode suppression ratio of 40.0 dB although no grating is fabricated in the LD region. The threshold current is 50 mA. The beam divergence angles in the horizontal and vertical directions are as small as 7.3 degrees ×18.0 degrees, respectively, resulting in 3.0 dB coupling loss with a cleaved single-mode optical fibre. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Laser Diode Integrated with a Dual-Waveguide Spot-Size Converter by Low-Energy Ion Implantation Quantum Well Intermixing |
| Тип | paper |
| DOI | 10.1088/0256-307X/22/7/034 |
| Electronic ISSN | 1741-3540 |
| Print ISSN | 0256-307X |
| Журнал | Chinese Physics Letters |
| Том | 22 |
| Первая страница | 1684 |
| Последняя страница | 1686 |
| Аффилиация | Hou Lian-Ping; National Research Center for Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
| Аффилиация | Zhu Hong-Liang; National Research Center for Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
| Аффилиация | Zhou Fan; National Research Center for Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
| Аффилиация | Wang Lu-Feng; National Research Center for Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
| Аффилиация | Bian Jing; National Research Center for Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
| Аффилиация | Wang Wei; National Research Center for Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
| Выпуск | 7 |
