| Автор | Yu Nai-Sen |
| Автор | Guo Li-Wei |
| Автор | Chen Hong |
| Автор | Xing Zhi-Gang |
| Автор | Wang Jing |
| Автор | Zhu Xue-Liang |
| Автор | Peng Ming-Zheng |
| Автор | Yan Jian-Feng |
| Автор | Jia Hai-Qiang |
| Автор | Zhou Jun-Ming |
| Дата выпуска | 2006-08-01 |
| dc.description | InGaN/GaN multiple quantum wells (MQWs) are grown on planar and maskless periodically grooved sapphires by metal organic vapour phase epitaxy (MOCVD). High-resolution x-ray rocking curves and transmission electron microscopy (TEM) are adopted to characterize the film quality. Compared with the MQWs grown on planar sapphire, the sample grown on grooved sapphire shows better crystalline quality: a remarkable reduction of dislocation densities is achieved. Meanwhile, the MQWs grown on grooved sapphire show two times larger PL intensity at room temperature. Temperature-dependent PL measurements are adopted to investigate the luminescence properties. The luminescence thermal quenching based on a fit to the Arrhenius plot of the normalized integrated PL intensity over the measured temperature range suggests that the nonradiative recombination centres (NRCs) are greatly reduced for the sample grown on grooved sapphire. We assume that the reduction of dislocations which act as NRCs is the main reason for the sample grown on pattern sapphire having higher PL intensity. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Luminescent Characteristics of Near Ultraviolet InGaN/GaN MQWs Grown on Grooved Sapphire Substrates Fabricated by Wet Chemical Etching |
| Тип | paper |
| DOI | 10.1088/0256-307X/23/8/077 |
| Electronic ISSN | 1741-3540 |
| Print ISSN | 0256-307X |
| Журнал | Chinese Physics Letters |
| Том | 23 |
| Первая страница | 2243 |
| Последняя страница | 2246 |
| Аффилиация | Yu Nai-Sen; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
| Аффилиация | Guo Li-Wei; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
| Аффилиация | Chen Hong; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
| Аффилиация | Xing Zhi-Gang; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
| Аффилиация | Wang Jing; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
| Аффилиация | Zhu Xue-Liang; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
| Аффилиация | Peng Ming-Zheng; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
| Аффилиация | Yan Jian-Feng; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
| Аффилиация | Jia Hai-Qiang; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
| Аффилиация | Zhou Jun-Ming; State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
| Выпуск | 8 |
