Low Threshold Current Density Operation of Strain-Compensated Quantum Cascade Laser
Shao Ye; Li Lu; Liu Jun-Qi; Liu Feng-Qi; Wang Zhan-Guo; Shao Ye; Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083; Li Lu; Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083; Liu Jun-Qi; Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083; Liu Feng-Qi; Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083; Wang Zhan-Guo; Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
Журнал:
Chinese Physics Letters
Дата:
2007-03-01
Аннотация:
We report the low threshold current density operation of strain-compensated In<sub>0.64</sub>Ga<sub>0.36</sub>As/In<sub>0.38</sub>Al<sub>0.62</sub>As quantum cascade lasers emitting near 4.94 μm. By employing an enlarged strain-compensated structure and optimizing the injector doping density, a rather low threshold current density of 0.57 kA/cm<sup>2</sup> at 80 K is achieved for an uncoated 20-μm-wide and 2.5-mm-long laser.
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