| Автор | Zhou Zhong-Tang |
| Автор | Xing Zhi-Gang |
| Автор | Guo Li-Wei |
| Автор | Chen Hong |
| Автор | Zhou Jun-Ming |
| Дата выпуска | 2007-06-01 |
| dc.description | Semi-insulating (SI) GaN is grown using N<sub>2</sub> as the nucleation layer (NL) carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using H<sub>2</sub> and N<sub>2</sub> as the NL carrier gas is investigated in our experiment. It is found that the sheet resistance of unintentionally doped GaN can be increased from 10<sup>4</sup> Ω/sq to 10<sup>10</sup> Ω/sq by changing the NL carrier gas from H<sub>2</sub> to N<sub>2</sub> while keeping the other growth parameters to be constant, however crystal quality and roughness of the film are degraded unambiguously. This situation can be improved by optimizing the NL annealing time. The high resistance of GaN grown on NL using N<sub>2</sub> as the carrier gas is due to higher density of threading dislocations caused by the higher density of nucleation islands and small statistic diameter grain compared to the one using H<sub>2</sub> as carrier gas. Annealing the NL for an optimized annealing time can decrease the density of threading dislocation and improve the film roughness and interface of AlGaN/GaN without degrading the sheet resistance of as-grown GaN significantly. High-quality SI GaN is grown after optimizing the annealing time, and AlGaN/GaN high electron mobility transistors are also prepared. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Growth of Semi-Insulating GaN Using N<sub>2</sub> as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time |
| Тип | paper |
| DOI | 10.1088/0256-307X/24/6/059 |
| Electronic ISSN | 1741-3540 |
| Print ISSN | 0256-307X |
| Журнал | Chinese Physics Letters |
| Том | 24 |
| Первая страница | 1645 |
| Последняя страница | 1648 |
| Аффилиация | Zhou Zhong-Tang; Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080 |
| Аффилиация | Xing Zhi-Gang; Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080 |
| Аффилиация | Guo Li-Wei; Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080 |
| Аффилиация | Chen Hong; Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080 |
| Аффилиация | Zhou Jun-Ming; Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080 |
| Выпуск | 6 |
