Автор |
Yan Jian-Feng |
Автор |
Xing Zhi-Gang |
Автор |
Wang Jing |
Автор |
Guo Li-Wei |
Автор |
Zhu Xue-Liang |
Автор |
Peng Ming-Zeng |
Автор |
Yu Nai-Sen |
Автор |
Jia Hai-Qiang |
Автор |
Chen Hong |
Автор |
Zhou Jun-Ming |
Дата выпуска |
2007-07-01 |
dc.description |
Canti-bridged epitaxial lateral overgrowth (CBELO) of GaN is performed by metalorganic chemical vapour deposition (MOCVD) on maskless V-grooved sapphire substrates prepared by wet chemical etching with different mesa widths. The wing tilt usually observed in ELO is not found in the CBELO GaN with wide mesa widths, while it can be detected obviously in the GaN with narrow mesa widths. The wing tilt of CBELO GaN grown on a grooved sapphire substrate with narrow mesa can be controlled by adjusting the thickness of the nucleation layer. The dependence of the wing tilt on the nucleation layer thickness is studied. Cross-sectional scanning electron microscopy is used to characterize the geometry of the wing regions, and double crystal x-ray diffraction is used to analyse the structural characteristics and to measure the magnitude of the crystalline wing tilt. It is found that the crystalline wing tilt can be eliminated completely by first growth of a thin nucleation GaN layer then the CBELO GaN. Possible reason and the origin of the wing tilt in CBELO GaN films are also discussed. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Название |
Elimination of Crystallographic Wing Tilt of Canti-Bridged Epitaxial Laterally Overgrown GaN Films by Optimizing Growth Procedure |
Тип |
paper |
DOI |
10.1088/0256-307X/24/7/064 |
Electronic ISSN |
1741-3540 |
Print ISSN |
0256-307X |
Журнал |
Chinese Physics Letters |
Том |
24 |
Первая страница |
2018 |
Последняя страница |
2021 |
Аффилиация |
Yan Jian-Feng; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
Аффилиация |
Xing Zhi-Gang; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
Аффилиация |
Wang Jing; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
Аффилиация |
Guo Li-Wei; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
Аффилиация |
Zhu Xue-Liang; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
Аффилиация |
Peng Ming-Zeng; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
Аффилиация |
Yu Nai-Sen; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
Аффилиация |
Jia Hai-Qiang; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
Аффилиация |
Chen Hong; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
Аффилиация |
Zhou Jun-Ming; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
Выпуск |
7 |