| Автор | Xing Zhi-Gang |
| Автор | Wang Jing |
| Автор | Pei Xiao-Jiang |
| Автор | Wan Wei |
| Автор | Chen Hong |
| Автор | Zhou Jun-Ming |
| Дата выпуска | 2007-08-01 |
| dc.description | By using the special maskless V-grooved c-plane sapphire as the substrate, we previously developed a novel GaN LEO method, or the so-called canti-bridge epitaxy (CBE), and consequently wing-tilt-free GaN films were obtained with low dislocation densities, with which all the conventional difficulties can be overcome [J. Vacuum Sci. Technol. B 23 (2005) 2476]. Here the evolution manner of dislocations in the CBE GaN films is investigated using transmission electron microscopy. The mechanisms of dislocation reduction are discussed. Dislocation behaviour is found to be similar to that in the conventional LEO GaN films except the enhanced dislocation-combination at the coalescence boundary that is a major dislocation-reduction mechanism for the bent horizontal-propagating dislocations in the CBE GaN films. The enhancement of this dislocation-combination probability is believed to result from the inclined shape and the undulate morphology of the sidewalls, which can be readily obtained in a wide range of applicable film-growth conditions during the GaN CBE process. Further development of the GaN CBE method and better crystal-quality of the GaN film both are expected. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Dislocation Reduction Mechanisms in Gallium Nitride Films Grown by Canti-Bridge Epitaxy Method |
| Тип | paper |
| DOI | 10.1088/0256-307X/24/8/054 |
| Electronic ISSN | 1741-3540 |
| Print ISSN | 0256-307X |
| Журнал | Chinese Physics Letters |
| Том | 24 |
| Первая страница | 2353 |
| Последняя страница | 2356 |
| Аффилиация | Xing Zhi-Gang; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
| Аффилиация | Wang Jing; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
| Аффилиация | Pei Xiao-Jiang; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
| Аффилиация | Wan Wei; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
| Аффилиация | Chen Hong; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
| Аффилиация | Zhou Jun-Ming; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
| Выпуск | 8 |
