| Автор | Wang Xin-Hua |
| Автор | Wang Xiao-Liang |
| Автор | Feng Chun |
| Автор | Xiao Hong-Ling |
| Автор | Yang Cui-Bai |
| Автор | Wang Jun-Xi |
| Автор | Wang Bao-Zhu |
| Автор | Ran Jun-Xue |
| Автор | Wang Cui-Mei |
| Дата выпуска | 2008-01-01 |
| dc.description | Pt/AlGaN/AlN/GaN Schottky diodes are fabricated and characterized for hydrogen sensing. The Pt Schottky contact and the Ti/Al/Ni/Au ohmic contact are formed by evaporation. Both the forward and reverse currents of the device increase greatly when exposed to hydrogen gas. A shift of 0.3V at 300K is obtained at a fixed forward current after switching from N<sub>2</sub> to 10%H<sub>2</sub>+N<sub>2</sub>. The sensor responses under different concentrations from 50ppm H<sub>2</sub> to 10%H<sub>2</sub>+N<sub>2</sub> at 373K are investigated. Time dependences of the device forward current at 0.5V forward bias in N<sub>2</sub> and air atmosphere at 300 and 373K are compared. Oxygen in air accelerates the desorption of the hydrogen and the recovery of the sensor. Finally, the decrease of the Schottky barrier height and sensitivity of the sensor are calculated. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2008 Chinese Physical Society and IOP Publishing Ltd |
| Название | Hydrogen Sensors Based on AlGaN/AlN/GaN Schottky Diodes |
| Тип | paper |
| DOI | 10.1088/0256-307X/25/1/072 |
| Electronic ISSN | 1741-3540 |
| Print ISSN | 0256-307X |
| Журнал | Chinese Physics Letters |
| Том | 25 |
| Первая страница | 266 |
| Последняя страница | 269 |
| Выпуск | 1 |
