| Автор | Zhang Jie |
| Автор | Guo Li-Wei |
| Автор | Xing Zhi-Gang |
| Автор | Ge Bing-Hui |
| Автор | Ding Guo-Jian |
| Автор | Peng Ming-Zeng |
| Автор | Jia Hai-Qiang |
| Автор | Zhou Jun-Ming |
| Автор | Chen Hong |
| Дата выпуска | 2008-12-01 |
| dc.description | High quality and highly conductive n-type Al<sub>0.7</sub>Ga<sub>0.3</sub>N films are obtained by using AlN multi-step layers (MSL) with periodical variation of V/III ratios by low-pressure metalorganic chemical vapour deposition (LP-MOCVD). The full-width at half-maximum (FWHM) of (0002) and (1015) rocking curves of the Si-doped Al0.7Ga0.3N layer are 519 and 625 arcsec, respectively. Room temperature (RT) Hall measurement shows a free electron concentration of 2.9 × 10<sup>19</sup> cm<sup>−3</sup>, and mobility of 17.8 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup>, corresponding to a resistivity of 0.0121 ω cm. High conductivity of the Si-doped AlGaN film with such high Al mole fraction is mainly contributed by a remarkable reduction of threading dislocations (TDs) in AlGaN layer. The TD reducing mechanism in AlN MSL growth with periodical variation of V/III ratio is discussed in detail. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2008 Chinese Physical Society and IOP Publishing Ltd |
| Название | Growth of Highly Conductive n-Type Al<sub>0.7</sub>Ga<sub>0.3</sub>N Film by Using AlN Buffer with Periodical Variation of V/III Ratio |
| Тип | paper |
| DOI | 10.1088/0256-307X/25/12/074 |
| Electronic ISSN | 1741-3540 |
| Print ISSN | 0256-307X |
| Журнал | Chinese Physics Letters |
| Том | 25 |
| Первая страница | 4449 |
| Последняя страница | 4452 |
| Выпуск | 12 |
