| Автор | Peng Ming-Zeng |
| Автор | Guo Li-Wei |
| Автор | Zhang Jie |
| Автор | Yu Nai-Sen |
| Автор | Zhu Xue-Liang |
| Автор | Yan Jian-Feng |
| Автор | Ge Bin-Hui |
| Автор | Jia Hai-Qiang |
| Автор | Chen Hong |
| Автор | Zhou Jun-Ming |
| Дата выпуска | 2008-06-01 |
| dc.description | A three-step growth process is developed for depositing high-quality aluminium-nitride (AlN) epilayers on (001) sapphire by low pressure metalorganic chemical vapour deposition (LP-MOCVD). We adopt a low temperature (LT) AlN nucleation layer (NL), and two high temperature (HT) AlN layers with different V/III ratios. Our results reveal that the optimal NL temperature is 840–880°C, and there exists a proper growth switching from low to high V/III ratio for further reducing threading dislocations (TDs). The screw-type TD density of the optimized AlN film is just 7.86 × 10<sup>6</sup>cm<sup>−2</sup>, about three orders lower than its edge-type one of 2 × 10<sup>9</sup>cm<sup>−2</sup> estimated by high-resolution x-ray diffraction (HRXRD) and cross-sectional transmission electron microscopy (TEM). |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2008 Chinese Physical Society and IOP Publishing Ltd |
| Название | Three-Step Growth Optimization of AlN Epilayers by MOCVD |
| Тип | paper |
| DOI | 10.1088/0256-307X/25/6/094 |
| Electronic ISSN | 1741-3540 |
| Print ISSN | 0256-307X |
| Журнал | Chinese Physics Letters |
| Том | 25 |
| Первая страница | 2265 |
| Последняя страница | 2268 |
| Выпуск | 6 |
