| Автор | Pei Xiao-Jiang |
| Автор | Guo Li-Wei |
| Автор | Wang Yang |
| Автор | Wang Xiao-Hui |
| Автор | Jia Hai-Qiang |
| Автор | Chen Hong |
| Автор | Zhou Jun-Ming |
| Автор | Wang Li |
| Автор | Tamai N |
| Дата выпуска | 2008-09-01 |
| dc.description | Temperature-dependent photoluminescence (PL) and time resolved photoluminescence (TRPL) are performed to study the PL characteristics and carrier transfer mechanism in asymmetric coupled InGaN/GaN multiple quantum wells (AS-QWs). Our results reveal that abnormal carrier tunnelling from the wide quantum well (WQW) to the narrow quantum well (NQW) is observed at temperature higher than about 100K, while a normal carrier tunnelling from the NQW to the WQW is observed at temperature lower than 100K. The reversible carrier tunnelling between the two QWs makes it possible to explore new types of temperature sensitive emission devices. It is shown that PL internal quantum efficiency (IQE) of the NQW is enhanced to about 46% due to the assistant of the abnormal carrier tunnelling. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2008 Chinese Physical Society and IOP Publishing Ltd |
| Название | Reversible Carriers Tunnelling in Asymmetric Coupled InGaN/GaN Quantum Wells |
| Тип | paper |
| DOI | 10.1088/0256-307X/25/9/101 |
| Electronic ISSN | 1741-3540 |
| Print ISSN | 0256-307X |
| Журнал | Chinese Physics Letters |
| Том | 25 |
| Первая страница | 3470 |
| Последняя страница | 3473 |
| Выпуск | 9 |
