| Автор | Zhang Jie |
| Автор | Guo Li-Wei |
| Автор | Chen Yao |
| Автор | Xu Pei-Qiang |
| Автор | Ding Guo-Jian |
| Автор | Peng Ming-Zeng |
| Автор | Jia Hai-Qiang |
| Автор | Zhou Jun-Ming |
| Автор | Chen Hong |
| Дата выпуска | 2009-06-01 |
| dc.description | Al<sub>x</sub>Ga<sub>1-x</sub>N epilayers with a wide Al composition range (0.2 ≤ x ≤ 0.68) were grown on AlN/sapphire templates by low-pressure metalorganic chemical vapour deposition (LP-MOCVD). X-ray diffraction results reveal that both the (0002) and (101̅5) full widths at half-maximum (FWHM) of the Al<sub>x</sub>Ga<sub>1−x</sub>N epilayer decrease with increasing Al composition due to the smaller lattice mismatch to the AlN template. However, the surface morphology becomes rougher with increasing Al composition due to the weak migration ability of Al atoms. Low temperature photoluminescence (PL) spectra show pronounced near band edge (NBE) emission and the NBE FWHM becomes broader with increasing Al composition mainly caused by alloy disorder. Meanwhile, possible causes of the low energy peaks in the PL spectra are discussed. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2009 Chinese Physical Society and IOP Publishing Ltd |
| Название | Growth and Characteristics of Epitaxial Al<sub>x</sub>Ga<sub>1−x</sub>N by MOCVD |
| Тип | paper |
| DOI | 10.1088/0256-307X/26/6/068101 |
| Electronic ISSN | 1741-3540 |
| Print ISSN | 0256-307X |
| Журнал | Chinese Physics Letters |
| Том | 26 |
| Первая страница | 68101 |
| Последняя страница | 68104 |
| Аффилиация | Zhang Jie; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 |
| Аффилиация | Guo Li-Wei; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 |
| Аффилиация | Chen Yao; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 |
| Аффилиация | Xu Pei-Qiang; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 |
| Аффилиация | Ding Guo-Jian; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 |
| Аффилиация | Peng Ming-Zeng; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 |
| Аффилиация | Jia Hai-Qiang; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 |
| Аффилиация | Zhou Jun-Ming; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 |
| Аффилиация | Chen Hong; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 |
| Выпуск | 6 |
