| Автор | Wang Wei |
| Автор | Ma Dong-Ge |
| Дата выпуска | 2010-01-01 |
| dc.description | A nonvolatile memory effect was observed in an organic thin-film transistor by introducing a Boating gate structure. The Boating gate was composed of an Al film in a thickness of nanometers, which was thermally deposited on a SiO2 insulator and exposed to air to spontaneously oxidize. It can be seen that the transistors exhibit significant hysteresis behaviors and storage circles in current-voltage characteristics in the dark and under illumination, indicating that the transistors may act as a nonvolatile memory element. The operational mechanism is discussed in the cases of dark and illumination via charge trapping by the Al floating gate. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2010 Chinese Physical Society and IOP Publishing Ltd |
| Название | Nonvolatile Memory Effect in Organic Thin-Film Transistor Based on Aluminum Nanoparticle Floating Gate |
| Тип | paper |
| DOI | 10.1088/0256-307X/27/1/018503 |
| Electronic ISSN | 1741-3540 |
| Print ISSN | 0256-307X |
| Журнал | Chinese Physics Letters |
| Том | 27 |
| Первая страница | 18503 |
| Последняя страница | 18506 |
| Выпуск | 1 |
