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Автор Li Wei
Автор Zhu Ning-Hua
Автор Wang Li-Xian
Автор Liu Jian-Guo
Автор Qi Xiao-Qiong
Автор Xie Liang
Дата выпуска 2010-10-01
dc.description Harmonic millimeter wave (mm-wave) generation and frequency up-conversion are experimentally demonstrated using optical injection locking and Brillouin selective sideband amplification (BSSA) induced by stimulated Brillouin scattering in a 10-km single-mode fiber. By using this method, we successfully generate third-harmonic mm-wave at 27 GHz (f<sub>LO</sub> = 9 GHz) with single sideband (SSB) modulation and up-convert the 2 GHz intermediate frequency signal into the mm-wave band with single mode modulation of the SSB modes. In addition, the mm-wave carrier obtains more than 23 dB power gain due to the BSSA. The transmission experiments show that the generated mm-wave and up-converted signals indicate strong immunity against the chromatic dispersion of the fibers.
Формат application.pdf
Издатель Institute of Physics Publishing
Копирайт 2010 Chinese Physical Society and IOP Publishing Ltd
Название Harmonic Millimeter Wave Generation and Frequency Up-Conversion Using Optical Injection Locking and Brillouin Selective Sideband Amplification
Тип paper
DOI 10.1088/0256-307X/27/10/104204
Electronic ISSN 1741-3540
Print ISSN 0256-307X
Журнал Chinese Physics Letters
Том 27
Первая страница 104204
Последняя страница 104207
Аффилиация Li Wei; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Аффилиация Zhu Ning-Hua; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Аффилиация Wang Li-Xian; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Аффилиация Liu Jian-Guo; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Аффилиация Qi Xiao-Qiong; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Аффилиация Xie Liang; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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