| Автор | D J Hayton |
| Автор | T E Jenkins |
| Автор | P Bailey |
| Автор | T C Q Noakes |
| Дата выпуска | 2002-07-01 |
| dc.description | Medium energy ion scattering, Fourier transform infrared spectroscopy and spectroscopic ellipsometry measurements have been performed on thermally grown SiO<sub>2</sub> layers on 4H silicon carbide. The data suggest the presence of a layer at the oxide–SiC interface consisting of both disordered Si and C. The infrared data indicate that the oxide layer is denser than fused silica. The thickness of the oxide layers as measured by spectroscopic ellipsometry agrees well with the values obtained from ion scattering. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Optical and ion-scattering study of SiO<sub>2</sub> layers thermally grown on 4H-SiC |
| Тип | lett |
| DOI | 10.1088/0268-1242/17/7/101 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 17 |
| Первая страница | L29 |
| Последняя страница | L32 |
| Выпуск | 7 |
