| Автор | Simon S M Chan |
| Автор | Michael D Whitfield |
| Автор | Richard B Jackman |
| Автор | Graham Arthur |
| Автор | Francis Goodall |
| Автор | Ronald A Lawes |
| Дата выпуска | 2003-03-01 |
| dc.description | Excimer laser projection patterning with an ArF (193 nm) source has been employed in the irradiation of thin diamond films. The effect of a number of process parameters including laser fluence and processing ambient on the quality of the etch product has been investigated; scanning electron microscopy shows that good control of etch quality may be achieved with excellent lateral reproduction of images down to 2 μm. Raman scattering and Auger electron spectroscopy of irradiated films have been correlated, and modifications in the diamond surface have been quantified according to processing parameters. Electrical tests on laser modified surfaces show that the reactivities of metals have a major role in the performance of contact metallizations on such a material. The viability of excimer laser etching of diamond as a manufacturing technique is considered. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | The effect of excimer laser etching on thin film diamond |
| Тип | paper |
| DOI | 10.1088/0268-1242/18/3/307 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 18 |
| Первая страница | S47 |
| Последняя страница | S58 |
| Выпуск | 3 |
