| Автор | Arturo Morales-Acevedo |
| Автор | G Francisco Pérez-Sánchez |
| Автор | Marco A García-Hurtado |
| Дата выпуска | 2004-10-01 |
| dc.description | The growth kinetics of silicon oxynitride (SiO<sub>x</sub>:N) thin films grown on silicon in N<sub>2</sub>O ambient in a conventional oven, at high pressures and temperatures has been investigated. Starting from the Deal and Grove (Deal and Grove 1965 J. Appl. Phys. 36 3770) model for silicon oxidation in O<sub>2</sub>, applied to this problem, we have found that the activation energy for the diffusion coefficient of the nitridating species (NO) is 2.54 eV. Similarly, the activation energy for the O<sub>2</sub> diffusion coefficient through the oxynitride layer was also determined to be 3.67 eV. From these results we conclude that the NO molecules diffuse faster than O<sub>2</sub> in the silicon oxynitride films, which explains why in spite of a high proportion of O<sub>2</sub> being present in the gas phase, the oxynitridation is limited by the kinetics of the NO molecules, causing a growth rate much less than for the oxidation of silicon in O<sub>2</sub>. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2004 IOP Publishing Ltd |
| Название | On the role of O<sub>2</sub> during the thermal oxynitridation of silicon in N<sub>2</sub>O at high pressure and temperature |
| Тип | paper |
| DOI | 10.1088/0268-1242/19/10/007 |
| Electronic ISSN | 1361-6641 |
| Print ISSN | 0268-1242 |
| Журнал | Semiconductor Science and Technology |
| Том | 19 |
| Первая страница | 1207 |
| Последняя страница | 1212 |
| Аффилиация | Arturo Morales-Acevedo; Centro de Investigación y de Estudios Avanzados del IPN, Electrical Engineering Department, Av IPN No 2508, 07360 DF, México, Mexico |
| Аффилиация | G Francisco Pérez-Sánchez; Centro de Investigación y de Estudios Avanzados del IPN, Electrical Engineering Department, Av IPN No 2508, 07360 DF, México, Mexico |
| Аффилиация | Marco A García-Hurtado; Centro de Investigación y de Estudios Avanzados del IPN, Electrical Engineering Department, Av IPN No 2508, 07360 DF, México, Mexico |
| Выпуск | 10 |
